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对比研究了国内外五种不同型号的PMOSFETs,在不同剂量率、不同偏置条件下的辐照响应特性;并对高剂量率辐照后的器件进行了与低剂量率辐照等时的室温退火。结果表明,随着辐照累积剂量的增加,所有器件阈值电压的漂移都更加明显;不同型号的器件在不同条件下,表现出了时间相关(TDE)和低剂量率损伤增强(ELDRS)两种不同的剂量率效应。因此,ELDRS效应在PMOSFETs器件中并不是普遍存在的。
The effects of five different types of PMOSFETs at different dose rates and bias conditions on the radiation response characteristics were compared. The effects of high dose rate radiation on the device performance were compared with those at low dose rate annealing. The results show that the threshold voltages of all the devices drift more obviously with the cumulative radiation dose increasing. Two different types of devices show time dependent (TDE) and low dose rate enhanced (ELDRS) under different conditions Different dose rate effects. Therefore, the ELDRS effect is not ubiquitous in PMOSFET devices.