一、前言Si单晶的生长过程以及其中缺陷的增减,是半导体研究中一个长期努力的课题,为此我们用激光辐照单晶硅,观察其现象,摸索其规律,希望能得到一些新的认识。二、实验过程实验的样品有通常MOS用的(100)Si和双极用的(111)Si,选用二种晶向的原因在于观察辐照效应与晶向的关系。经过清洗之后,在Stril腐蚀液中腐蚀,观察激光辐照前的晶相和 I. INTRODUCTION The growth process of Si single crystal and the increase and decrease of its defects are a long-term endeavor in the research of semiconductor. For this reason, we irradiate single crystal silicon with laser and observe the phenomenon and explore its law, hoping to get some new Understanding. Second, the experimental process The sample is usually used for MOS (100) Si and bipolar (111) Si, the choice of two kinds of crystal orientation is due to the observation of the relationship between radiation effects and crystal orientation. After cleaning, corrosion in Stril etching solution, observe the crystal phase before laser irradiation and