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业已证明,用限流的阴极接触能够改善较厚汽相外延片的磷化铟电子转移器件的特性。用银-锡合金做接触的有源层为34微米厚的器件,在5千兆赫下已获得120瓦峰值功率和18％的效率。
It has been demonstrated that current limiting cathode contact can improve the characteristics of indium phosphide electronic transfer devices for thicker vapor phase epitaxial wafers. The active layer in contact with the silver-tin alloy is a 34 micron thick device that has achieved 120 Watts peak power and 18% efficiency at 5 GHz.