利用超高真空扫描隧道显微镜(STM)对沉积在Si(111)-7×7重构表面上的锰薄膜在300-650℃之间的固相反应进行了研究.锰原子最初在Si(111)衬底上形成锰的纳米团簇的有序阵列,经过300℃退火后,锰纳米团簇的尺寸增大并且纳米团簇阵列由有序变为无序;当退火温度达到400℃左右时,锰纳米团簇与硅衬底发生反应生成富锰的三维岛状物和由MnSi构成的平板状岛;500℃退火后生成物全部转变为MnSi平板状岛;650℃退火后生成物则由MnSi平板状岛全部转变为富硅的不规则的大三维岛,同时被破坏的衬底表面重新结晶形成7×7结构. The solid-state reaction of manganese thin films deposited on Si (111) -7 × 7 reconstructed surface at 300-650 ℃ was investigated by using ultra-high vacuum scanning tunneling microscopy (STM) ), An ordered array of nanoclusters of manganese was formed on the substrate. After annealed at 300 ℃, the size of Mn nanoclusters increased and the nanocluster array changed from ordered to disordered. When the annealing temperature reached about 400 ℃ , The manganese nanoclusters react with the silicon substrate to form a three-dimensional manganese-rich island and a plate-shaped island composed of MnSi; all the products after annealing at 500 ° C. are transformed into MnSi plate-shaped islands; and the resulting product is annealed at 650 ° C. The MnSi plate islands all transform into silicon-rich, irregular, large three-dimensional islands, while the disrupted surface of the substrate recrystallizes to form a 7x7 structure.