论文部分内容阅读
采用磁控溅射方法,以Si(1OO)为衬底在40~80 W功率下制备了Fe_(83)Ga_(17)薄膜,通过XRD、SEM、室温磁滞回线以及MFM的测量研究了不同溅射功率制备的Fe-Ga薄膜的结构、形貌、磁性能和磁畴。XRD结果表明室温下薄膜样品是bcc(11O)晶体结构。SEM观察结果表明薄膜颗粒尺寸在40~70 nm且随着功率增大,薄膜颗粒的尺寸变大,薄膜厚度增加。室温磁滞回线的测量结果表明一定范围内随着功率增大,样品的矫顽力H_c总体呈上升趋势,饱和磁化强度M_s的变化规律并不明显,剩余磁化强度M和矩形比Mr/Ms呈缓慢下降的趋势。磁畴的观察结果表明样品的磁畴为迷宫畴结构,且随着功率增大,磁畴的尺寸增大。
The Fe_ (83) Ga_ (17) thin films were prepared by magnetron sputtering at 40-80 W using Si (100) as substrate. The XRD, SEM, hysteresis loops at room temperature and MFM measurements were studied Structure, Morphology, Magnetic Properties and Magnetic Domains of Fe-Ga Thin Films Prepared at Different Sputtering Power. XRD results show that the film samples at room temperature is bcc (11O) crystal structure. SEM observation shows that the size of the film is 40 ~ 70 nm and the size of the film increases with the increase of the power, and the thickness of the film increases. The measurement of hysteresis loop at room temperature shows that the coercivity Hc of the sample increases with the increase of the power within a certain range, and the variation law of the saturation magnetization M_s is not obvious. The remanent magnetization M and the squareness ratio Mr / Ms Slowly declining trend. The observation of the magnetic domain shows that the magnetic domain of the sample is a labyrinth domain structure, and as the power increases, the size of the magnetic domain increases.