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硅基APD的性能取决于其器件结构与工艺过程。文中对n+-p-π-p+外延结构的APD器件的工艺和器件性能进行了仿真分析,为硅基APD器件的设计提供了理论指导。利用Silvaco软件对APD器件的关键工艺离子注入和扩散工艺进行了仿真,确定工艺参数对杂质的掺杂深度和掺杂分布的影响。并且,对于APD器件的性能进行了分析,对电场分布、增益、量子效率、响应度等参数进行了仿真分析。仿真结果表明:在给定的器件参数条件下,所设计的APD器件的增益为100时,响应度峰值为55A/W左右,在600~900 nm范围内具有较高响应度,峰值波长在810 nm。
The performance of silicon-based APD depends on its device structure and process. In this paper, the process and device performance of APD devices with n + -p-π-p + epitaxial structure are simulated and analyzed, which provides theoretical guidance for the design of silicon-based APD devices. Silvaco software was used to simulate the key process ion implantation and diffusion processes of APD devices to determine the effect of process parameters on the impurity doping depth and doping distribution. In addition, the performance of APD devices is analyzed, and the parameters of electric field distribution, gain, quantum efficiency and responsivity are simulated and analyzed. The simulation results show that under given device parameters, the designed APD device has a gain of 100 and a peak response of about 55 A / W, a high responsivity in the range of 600-900 nm and a peak wavelength of 810 nm.