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We study photoluminescence(PL)of SiOx(0 ＜ x ＜ 2)thin films after annealing at temperatures in the range of 700-1100℃ .The SiOx thin films were prepared by evaporation of SiO powder onto the substrate of Si(100).Two PL emission structures were observed in the measuring range of 580-755 nm.The one centred around ～ 730 nm was confirmed to be due to Si nanocrystals.The origin for the other one spanning the range of 580-650nm was investigated by using hydrogen and oxygen passivations,and by short time annealing at 1100℃ followed by hydrogenation.Our results support the model of structural defects in SiO2 matrix for the origin of the 580-650nm PL peak.