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给出了低电压微波 Si Ge功率异质结双极型晶体管 (HBT)的器件结构和测试结果 .器件结构适于低压大电流状态下应用 .采用了梳状发射极条的横向版图设计 ,其工作电压为 3— 4V.在 C类工作状态 ,1GHz的工作频率下 ,输出功率可以达到 1.6 5 W,具有 8d B的增益 . 3V时可以达到的最高收集极效率为 6 7.8% .
The device structure and test results of low-voltage microwave SiGe power heterojunction bipolar transistor (HBT) are given.The device structure is suitable for low-voltage and high-current conditions.The lateral layout design of comb emitter is used, The operating voltage is 3 to 4 V. In Class C operation at 1 GHz, the output power can reach 1.6 5 W with a gain of 8 dB B. The highest collector efficiency achievable at 3 V is 6 7.8%.