它是以金属—氧化物一半导体场效应晶体管为主体构成的集成电路,简称为MOS集成电路。以N型沟道MOS晶体管构成的集成电路,称为N沟MOS集成电路,以P型沟道MOS晶体管构成的集成电路称为P沟MOS集成电路,二者统称单沟MOS电路。 N沟器件的多数载流子是电子,P沟器件的多数载流子是空穴。场效应器件是多数载流子工作的器件,电子比空穴的有效质量小,迁 It is a metal-oxide semiconductor field effect transistor as the main body of the integrated circuit, referred to as MOS integrated circuits. An integrated circuit formed of an N-channel MOS transistor is referred to as an N-channel MOS integrated circuit and an integrated circuit formed of a P-channel MOS transistor is referred to as a P-channel MOS integrated circuit. The two are collectively referred to as a single-channel MOS circuit. The majority carriers of an N-channel device are electrons, and the majority carriers of a P-channel device are holes. Field effect device is the majority of carrier-operated devices, the effective mass of electrons than holes small, move