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采用幂级数方法对基于全耗尽 (FD)SOIMOSFET和凹陷 (RC)沟道SOIMOSFET的失真行为进行了研究 ,发现随着沟道长度的减小失真行为变坏 ,且RCSOI器件较FD器件具有更好的失真行为 .同时 ,从实验数据可以看出 ,不理想的体接触会由于体分布电阻的增加而使失真行为变坏 .该结果可以为低失真混合信号集成系统的设计提高指导方向
The power series based on the depletion (FD) SOIMOSFET and the recess (RC) channel SOIMOSFET distortion behavior was studied and found that as the channel length decreases the distortion behavior worse, and the RCSOI device has a Better distortion behavior.At the same time, it can be seen from the experimental data that the undesired body contact will deteriorate the distortion behavior due to the increase of the body-distributed resistance.This result can improve the direction for the design of a low-distortion mixed-signal integrated system