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采用中频感应提拉法生长出了掺杂浓度的原子分数高达２０％的Ｙｂ∶ＹＡＧ晶体，探索了合适的晶体生长、退火工艺参数；研究了晶体中的杂质离子和色心；选用ＩｎＧａＡｓ半导体激光泵浦，通过激光腔的设计，研究了晶体的激光性能，获得了１０３０ｎｍ波长３００ｍＷ的脉冲激光输出，斜率效率为３０％。
Yb:YAG crystal with doping concentration up to 20% was grown by IF induction pulling method. The suitable parameters of crystal growth and annealing were explored. The impurity ions and color centers in the crystal were studied. InGaAs semiconductor laser The laser was designed by laser cavity. The laser performance of the crystal was studied. The pulse laser output of 300mW at 1030nm was obtained, and the slope efficiency was 30%.