论文部分内容阅读
研究了十甲基环五硅氧烷(D5)的电子回旋共振等离子体沉积的SiCOH薄膜中Si—OH基团对介电性能和漏电流的影响.结果表明Si—OH含量的增大会导致介电常数k的增大、漏电流的降低和介电色散的增强.由于Si—OH结构的强极化补偿了薄膜密度减小带来的介电常数降低,导致总的介电常数k增大.高Si—OH含量下漏电流的降低是由于封端的Si—OH基团降低了薄膜中Si—O网络的连通概率p而导致网络电导下降的缘故.介电色散的增强与Si—OH封端结构的快极化过程有关.改变放电参数以提高电子能量,从而提高源的电离程度,使更多的Si—OH基团断裂并通过缩合反应形成Si—O—Si网络,可以进一步降低薄膜的介电常数.
The influence of Si-OH groups on the dielectric properties and leakage current of SiCOH films deposited by decadimethylcyclopentasiloxane (D5) was studied. The results show that the increase of Si-OH content leads to the formation of The increase of the electric constant k, the reduction of the leakage current and the enhancement of the dielectric dispersion.Because of the strong polarization of the Si-OH structure compensates for the decrease of the dielectric constant due to the decrease of the film density, the total dielectric constant k increases The decrease of the leakage current under high Si-OH content is due to the reduction of the connectivity probability p of the Si-O network in the film due to the blocked Si-OH group, which leads to the decrease of the network conductance. Terminal structure of the fast polarization process.Changing the discharge parameters to improve the electron energy, thereby increasing the source ionization degree, so that more Si-OH group rupture and condensation reaction to form Si-O-Si network, can further reduce the film The dielectric constant.