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采用溶胶-凝胶技术,在Pt(111)/Ti/SiO2/Si(100)基底上制备Pb0.97La0.02(Zr0.95Ti0.05)O3反铁电厚膜材料,研究了单步和多步退火工艺对反铁电厚膜结构及电学性能的影响。结果表明:与传统的单步退火方式相比,多步退火工艺制备的反铁电厚膜材料晶粒尺寸较大,结构致密性好,室温下反铁电态更稳定,具有良好的择优取向度(100)、较高的介电常数(达529)和饱和极化强度(达42μC/cm2)。其反铁电-铁电和铁电-反铁电的相变电场强度分别为198和89 kV/cm,反铁电-铁电相变电流密度达2×10-5 A/cm2,多次退火工艺可提高反铁电厚膜的成膜质量。
The Pb0.97La0.02 (Zr0.95Ti0.05) O3 antiferroelectric thick film material was prepared on Pt (111) / Ti / SiO2 / Si (100) substrate by sol-gel technique. Effect of Step Annealing Process on Structure and Electrical Properties of Antiferroelectric Thick Film. The results show that compared with the conventional single-step annealing method, the anti-ferroelectric thick film prepared by the multi-step annealing process has larger grain size, better structural compactness, more stable antiferroelectric state at room temperature and good preferential orientation Degrees (100), higher dielectric constant (up to 529) and saturation polarization (up to 42 μC / cm2). Its anti-ferroelectric-ferroelectric and ferroelectric-antiferroelectric phase transition electric field strength were 198 and 89 kV / cm, antiferroelectric-ferroelectric phase change current density of 2 × 10-5 A / cm2, many times Annealing process can improve the film quality anti-ferroelectric thick film.