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采用化学溶液分解法 (CSD)在Si衬底上制备了Bi2 Ti2 O7薄膜 .X射线双晶衍射和原子力显微镜检测表明 ,所制备的薄膜主要为Bi2 Ti2 O7相的多晶材料 .同时还研究了Au Bi2 Ti2 O7 n Si(10 0 )结构的电容 电压 (C V)特性 ,结果表明 ,在Bi2 Ti2 O7薄膜中同时存在固定的与可移动的负电荷 ,可移动的负电荷导致了C V曲线的回线效应
Bi2Ti2O7 thin films were prepared on Si substrate by chemical solution decomposition (CSD). The results of X-ray double crystal diffraction and atomic force microscopy showed that the thin films were mainly composed of polycrystalline Bi2Ti2O7 phase, Au Bi2 Ti2 O7 n Si (10 0) structure. The results show that both the fixed and the movable negative charges exist in the Bi 2 Ti 2 O 7 thin film. Line effect