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在非故意掺杂的和掺Si的GaN薄膜上蒸镀Ti(24nm)/Al(nm)薄膜,氮气环境下400～800℃范围内进行退火。实验结果表明,在非故意掺杂的样品上,随退火温度的升高,肖特基势垒高度下降,理想因子升高,表面状况逐渐变差,600℃退火形成较低接触电阻的欧姆接触,比接触电阻率为3.03×10-4Ωcm2,而载流子浓度为5.88×1018cm-3的掺Si的样品未退火就形成欧姆接触,比接触电阻可达到4.03×10-4Ωcm2。
A Ti (24 nm) / Al (nm) thin film is deposited on an unintentionally doped Si-doped GaN film and annealed in a temperature range of 400 to 800 ° C in a nitrogen atmosphere. The experimental results show that on the unintentionally doped samples, the Schottky barrier height decreases with the increase of annealing temperature and the ideal factor increases, and the surface condition gradually deteriorates with annealing temperature increasing. Annealing at 600 ℃ leads to the formation of ohmic contact with lower contact resistance , The specific resistance is 3.03 × 10-4Ωcm2, and the carrier concentration of 5.88 × 1018cm-3 of the Si-doped sample is not annealed to form an ohmic contact, the specific resistance can reach 4.03 × 10-4Ωcm2.