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The conduction mechanism of gate leakage current through thermally grown silicon dioxide(Si02)films on(100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon(n+-polySi) gate.The analysis utilizes the measured gate current density J_G at high oxide fields E_(ox) in5.4 to 12 nm thick Si02 films between 25 and 300 ℃.The leakage current measured up to 300 ℃ was due to Fowler-Nordheim(FN) tunneling of electrons from the accumulated n+-polySi gate in conjunction with Poole Frenkel(PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV(depending on the oxide thickness) below the Si02 conduction band(CB).It was observed that PF emission current I_(PF) dominates FN electron tunneling current I_(FN) at oxide electric fields E_(OX) between 6 and 10 MV/cm and throughout the temperature range studied here.Understanding of the mechanism of leakage current conduction through Si02 films plays a crucial role in simulation of time-dependent dielectric breakdown(TDDB) of metaloxide-semiconductor(MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.
The conduction mechanism of gate leakage current through thermally grown silicon dioxide (Si02) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately-doped n-type polysilicon (n + -polySi) gate. the measured gate current density J_G at high oxide fields E_ (ox) in 5.4 to 12 nm thick Si02 films between 25 and 300 ° C. The leakage current measured up to 300 ° C was due to Fowler-Nordheim (FN) tunneling of electrons from the accumulated n + -polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the Si02 conduction band (CB) was observed that PF emission current I_ (PF) dominates FN electron tunneling current I_ (FN) at oxide electric fields E_ (OX) between 6 and 10 MV / cm and throughout the temperature range studied here. Understanding the mechanism of leakage current conduction through Si02 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide-semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.