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通过自组装层法、磁控溅射依次在Si O2基底上化学镀制备了Ni-Mo-P、Cu薄膜,薄膜厚度和成分通过X射线荧光仪(XRF)测定。对Si O2/Ni-Mo-P/Cu体系进行了400~600℃的热处理,利用X射线衍射仪(XRD)对物相结构的稳定性进行了测定,利用场发射扫描电镜(FE-SEM)和电子能谱仪(EDS)对表面形貌的稳定性进行了观察和成分分析。结果表明,在400和500℃热处理后,体系稳定性良好,但在较快的降温速率(40℃/min)条件下,Si O2/Ni-Mo-P/Cu体系在600℃热处理后失效,根据热失配应力,提出了薄膜破裂模型,Ni-Mo-P薄膜与Si O2界面断裂能为2.12 J/m2。Cu薄膜在600℃热处理时发生团聚,Cu在Ni-Mo-P上的团聚激活能为1.15 e V,大于Cu在Si O2上的团聚激活能0.6 e V。
Ni-Mo-P and Cu films were electrolessly plated on Si O2 substrates by self-assembled layer method and magnetron sputtering. The film thickness and composition were measured by X-ray fluorescence spectrometer (XRF). The heat treatment of Si O2 / Ni-Mo-P / Cu system was carried out at 400-600 ℃. The stability of the phase structure was determined by X-ray diffraction (XRD) And electron spectroscopy (EDS) on the stability of the surface morphology was observed and composition analysis. The results show that the stability of the system is good after heat treatment at 400 and 500 ℃. However, the Si O2 / Ni-Mo-P / Cu system failed to be annealed at 600 ℃ at a faster cooling rate (40 ℃ / min) According to the thermal mismatch stress, a film rupture model is proposed. The interfacial fracture energy between Ni-Mo-P film and Si O2 is 2.12 J / m 2. The Cu films agglomerated during the heat treatment at 600 ℃. The cohesive activation energy of Cu on Ni-Mo-P was 1.15 eV, which was larger than that of Cu on Si O2 by 0.6 eV.