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采用X射线光电子谱(XPS)和紫外光电子谱(UPS)着重研究了GaAs(100)表面由于Ar~+离子轰击而导致的功函数变化及Ga3d,As3d能级变化。从中仔细分析由于Ar~+离子轰击n—GaAs(100)表面的能带弯曲,结果表明,不同能量Ar~+离子轰击后,Ga3d及As3d的位移峰结合能变化可达0.3eV,同时功函数也变化相同的值。而且在不同温度下尽管采用同一能量Ar~+离子轰击。GaAs(100)表面功函数也有明显的差别。但是,在低温下(—120℃左右),采用不同能量的Ar~+离子轰击GaAs(100)表面,GaAs(100)表面仍有相同的功函数。
X-ray photoelectron spectroscopy (XPS) and ultraviolet (UV) electron spectroscopy (UPS) were used to study the work function changes and Ga3d, As3d energy levels changes of GaAs (100) surface due to bombardment of Ar + ions. The results show that the binding energies of Ga3d and As3d shifts up to 0.3eV after bombarding with Ar ~ + ions, and the work function Also change the same value. And at different temperatures despite the use of the same energy Ar ~ + ion bombardment. The work function of GaAs (100) surface also has obvious difference. However, at low temperature (about -120 ℃), GaAs (100) surface is bombarded with Ar ~ + ions with different energies, and the same work function remains on the surface of GaAs (100).