Cu(In,Ga)Se2 absorbers prepared by electrodeposition for low-cost thin-film solar cells

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Reducing the manufacturing cost of solar cells is necessary to their industrial production.Electrodepositing is an effective,non-vacuum method which is very suitable for cutting the manufacturing cost of thin films as well as developing its large-scale industrial production.In this study,about 1-μm-thick Cu(In,Ga)Se2 (CIGS) precursors were electrodeposited on Mo/glass substrates in aqueous solution utilizing a three-electrode potentiostatic system.Triethanolamine was used as complexing agent,and all parameters of electrodeposition were precisely controlled.After that,the electrodeposited precursors were selenized in a Se atmosphere with different heating ramp rates (60 and 600℃·min-1).High-quality CIGS films were obtained,and their characteristics were investigated by X-ray fluorescence,scanning electron microscopy,energydispersive spectroscopy,X-ray diffraction,Raman spectra and near-infrared-visible (NIR-Vis) spectra.The results reveal that there are many differences between the properties of the films under different heating rates.Finally,CIGS solar cells were fabricated using a fast and a slow heating rate.The maximum efficiencies achieved for the films selenized at 60 and 600 ℃·min-1 are 3.15% and 0.71%,respectively.
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