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用人体静电放电模拟器对以GaAs MESFET为主要有源器件的MMIC的静电敏感度进行研究,叙述了在MMIC设计、工艺制作等环节防静电和提高MMIC抗静电能力的措施,采用这些措施后,低噪声MMIC静电损伤阈值达到500~800 V。
The human electrostatic discharge simulator is used to study the electrostatic susceptibility of MMIC with GaAs MESFET as the main active device. The measures to prevent the static electricity in the MMIC design, process manufacture and other aspects and to improve the anti-static ability of the MMIC are described. After adopting these measures, Low-noise MMIC electrostatic damage threshold of 500 ~ 800 V.