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以Ⅱ－Ⅵ族无机半导体ＺｎＳ替代双层有机薄膜电致发光器件的电子传输层，以ＰＰＶ为空穴传输层和发光层制备出发光器件，得到发光亮度和效率都比单层ＰＰＶ器件高的电致发光器件。器件结构为ＩＴＯ／ＰＰＶ／ＺｎＳ／Ａｌ。器件的电致发光光谱同单层ＰＰＶ器件的光谱基本相同，但启亮电压只有４．５Ｖ，亮度也比单层器件高一个量级。通过ＰＰＶ层自吸收现象可判断出发光区域在ＰＰＶ／ＺｎＳ界面处。器件的电流密度与电压的二次方成线性关系，与存在高斯分布的浅陷阱的一种载流子平面注入的空间电荷限制电流模型符合
In this paper, the electron-transporting layer of Ⅱ-Ⅵ inorganic ZnS was replaced by the electron-transporting layer of double-layer organic thin film electroluminescent device, the light-emitting device was prepared by PPV as hole transport layer and luminescent layer, Electroluminescent devices. The device structure is ITO / PPV / ZnS / Al. The electroluminescence spectrum of the device is basically the same as that of the single-layer PPV device, but the starting voltage is only 4.5V and the brightness is one order of magnitude higher than the single-layer device. Through PPV layer self-absorption phenomenon can be judged that the light-emitting area at the PPV / ZnS interface. The current density of the device is linearly proportional to the square of the voltage and corresponds to the space charge-limited current model of a carrier-plane implant with a Gaussian distributed shallow trap