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Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si structure has been fabricated with a preferentially (111)-orientated Bi 2 Ti 2 O 7 seeding layer as a ferroelectric gate of metal-ferroelectric-insulator field effect transistor.Bi 3.54 Nd 0.46 Ti 3 O 12 and Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 films are both well-crystallized when annealed at 680℃ for 40 min,and have smooth,dense and crack-free surfaces.The width of memory window of the ferroelectric gate increases with increasing electric field applied to the Bi 3.54 Nd 0.46 Ti 3 O 12 thin films.The width of memory window of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si with seeding layer is relatively wider than that of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Si at the same bias voltage,and the counterclockwise hysteresis curve of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si is referred to as polarization type switching at different voltages.Bi 2 Ti 2 O 7 seeding layer plays an important role in alleviating the element interdiffusion between Bi 3.54 Nd 0.46 Ti 3 O 12 and Si.
Au / Bi 3.54 Nd 0.46 Ti 3 O 12 / Bi 2 Ti 2 O 7 / Si structure has been fabricated with a preferentially (111) -orientated Bi 2 Ti 2 O 7 seeding layer as a ferroelectric gate of the metal-ferroelectric-insulator field effect transistor. Bi 3.54 Nd 0.46 Ti 3 O 12 and Bi 3.54 Nd 0.46 Ti 3 O 12 / Bi 2 Ti 2 O 7 films are both well-crystallized when annealed at 680 ° C. for 40 min, and have smooth, dense and crack- free surfaces. The width of the memory window of the ferroelectric gate increases with increasing electric field applied to the Bi 3.54 Nd 0.46 Ti 3 O 12 thin films. The width of the memory window of Au / Bi 3.54 Nd 0.46 Ti 3 O 12 / Bi 2 Ti 2 O 7 / Si with seeding layer is relatively wider than that of Au / Bi 3.54 Nd 0.46 Ti 3 O 12 / Si at the same bias voltage, and the counterclockwise hysteresis curve of Au / Bi 3.54 Nd 0.46 Ti 3 O 12 / Bi 2 Ti 2 O 7 / Si is referred to as polarization type switching at different voltages. Bi 2 Ti 2 O 7 seeding layer plays an important role in alleviating the element interdiffusion between Bi 3.54 Nd 0.46 Ti 3 O 12 and Si.