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提出了一种含有Al N插入层的新型Al组分渐变的N极性Ga N基高电子迁移率晶体管(HEMT)结构,并通过自洽求解一维薛定谔方程和泊松方程,仿真研究了该新型N极性HEMT结构的二维电子气特性。结果表明采用该新型N极性HEMT结构其体载流子浓度峰值与普通Al组分渐变N极性HEMT结构相比提高了12%。同时定义了Al组分从大到小渐变层和从小到大渐变层厚度之比R及最大值xmax,仿真表明二维电子气面密度随R增大而减小,而xmax超过0.4后二维电子气面密度出现饱和趋势。
A novel Al composition gradient AlGaN-based high electron mobility transistor (HEMT) structure containing Al N insertion layer was proposed. By solving one-dimensional Schrödinger equation and Poisson’s equation in a self-consistent manner, Two - dimensional electron gas properties of N - polar HEMT structure. The results show that with the new N-polar HEMT structure, the peak value of the bulk carrier concentration is increased by 12% compared with the conventional Al-component graded N-polar HEMT structure. At the same time, the ratio R of the Al composition from small to large gradient layer and the thickness gradient of small to large gradient layer are defined. The simulation shows that the density of two-dimensional electron gas decreases as R increases, while the two-dimensional Electronic gas density saturation trend.