论文部分内容阅读
采用电沉积法在碳化硅纳米线薄膜上沉积镍硫合金,制备碳化硅纳米线/镍硫合金薄膜复合电极,采用场发射扫描电子显微镜(FESEM)、X射线衍射(XRD)、阴极极化曲线(LSV)等分析测试方法对该薄膜的形貌、结构和电化学性能进行了表征。结果表明:镍硫合金沉积层主要以Ni_3S_2结晶态的形式覆盖在碳化硅纳米线薄膜表面,纳米线沉积合金前直径约80nm,沉积后增大到100nm左右。重点研究了Ni_3S_2/SiC电极在光照前后的光电性能,在1 M KOH溶液中的LSV曲线测试表明:Ni_3S_2/SiC电极的起始电压比SiC电极减小约200mV;在光照下Ni_3S_2/SiC电极起始电压比无光照下降低约400mV(电流密度为9mA·cm~(-2)),计时电位曲线测试表明电极具有很好的稳定性。
The nickel-sulfur alloy was deposited on the silicon carbide nanowire thin film by electrodeposition method to prepare the silicon carbide nanowire / nickel-sulfur alloy thin film composite electrode. The structure of the silicon carbide nanowire / nickel-sulfur alloy thin film composite electrode was characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (LSV) and other analytical methods to characterize the morphology, structure and electrochemical properties of the film. The results show that the deposited layer of Ni-S alloy mainly covers the surface of silicon carbide nanowire thin film in the form of Ni_3S_2 crystal. The diameter of nanowire deposited alloy is about 80nm before deposition and increases to about 100nm after deposition. The electro-optical properties of Ni_3S_2 / SiC electrode before and after light irradiation were investigated. The LSV curves of Ni_3S_2 / SiC electrode in 1 M KOH solution showed that the initial voltage of Ni_3S_2 / SiC electrode was reduced by about 200 mV compared with that of SiC electrode. The initial voltage was reduced by about 400mV (current density was 9mA · cm -2) compared with that without light, and the test of the potential curve showed that the electrode had good stability.