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ITO/Ga_2O_3 bi-layer films were deposited on quartz glass substrates by magnetron sputtering.The effect of substrate temperature on the structure,surface morphology,optical and electrical properties of ITO/Ga_2O_3 films was investigated by an X-ray diffractometer,a scanning electron microscope,a double beam spectrophotometer and the Hall system,respectively.The structural characteristics showed a dependence on substrate temperature. The resistivity of the films varied from 6.71×10~(-3) to 1.91×10~3Ω·cm as the substrate temperature increased from 100 to 350℃.ITO(22 nm)/Ga_2O_3(50 nm) films deposited at 300℃exhibited a low sheet resistance of 373.3Ω/□and high deep ultraviolet transmittance of 78.97%at the wavelength of 300 nm.
ITO / Ga_2O_3 bi-layer films were deposited on quartz glass substrates by magnetron sputtering. The effect of substrate temperature on the structure, surface morphology, optical and electrical properties of ITO / Ga_2O_3 films was investigated by an X-ray diffractometer, a scanning electron The resistivity of the films varied from 6.71 × 10 -3 to 1.91 × 10 -3 Ω · cm as the substrate temperature increased from 100 to 350 ° C. ITO (22 nm) / Ga 2 O 3 (50 nm) films deposited at 300 ° C. exhibited a low sheet resistance of 373.3 Ω / □ and high deep ultraviolet transmittance of 78.97% at the wavelength of 300 nm.