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研究基于Bi2Te3合金的n型半导体的实验制备。该材料可用于制备热电散热器和发电设备。采用Czochralski法制备Bi2Te2.88Se0.12固溶单晶体。采用电子显微镜研究样品的组织变化。利用EDS分析实验合金的成分,并确立化合物的经验分子式。XRD表明Bi2Te2.88Se0.12样品为具有斜方六面体结构的单晶。利用差热分析研究合金的加热行为。利用热重分析研究材料的物理和化学性能随温度的变化。从XRD分析得到的Bi2Te2.88Se0.12晶格参数与Bi2Te3的非常相近,表明只有少部分Te被Se取代。所得的单晶的比电导率和比热导率与已有数据相符。所得维氏显微硬度为HV 187~39.02,且随着载荷增加,硬度降低。结果表明可以采用红外热成像法对热电元件和模块进行表征。
The experimental preparation of n-type semiconductor based on Bi2Te3 alloy was studied. This material can be used to make thermoelectric radiators and power generation equipment. The Bi2Te2.88Se0.12 single crystal was prepared by Czochralski method. The microstructure of the samples was examined by electron microscopy. The composition of the experimental alloy was analyzed by EDS and the empirical formula of the compound was established. XRD shows that the Bi2Te2.88Se0.12 sample is a single crystal with rhombohedral structure. Study on the Heating Behavior of Alloys by Differential Thermal Analysis. Thermogravimetric analysis was used to study the physical and chemical properties of the material as a function of temperature. The lattice parameters of Bi2Te2.88Se0.12 obtained from XRD analysis are very similar to that of Bi2Te3, indicating that only a small fraction of Te is replaced by Se. The specific and specific thermal conductivities of the resulting single crystals are in accordance with the available data. The resulting Vickers microhardness HV 187 ~ 39.02, and with the load increases, the hardness decreases. The results show that thermoelectric elements and modules can be characterized by infrared thermography.