用高频溅射法在P型硅衬底上生长了纳米硅薄膜,衬底温度控制在95℃左右,工作气体选用H2+Ar,氢气的分压控制在31%到70%,同时改变薄膜的沉积时间。Tauc曲线显示出用射频溅射法制备的薄膜是一种宽带隙材料。结合实验数据,在HQD理论基础上,给出了这种薄膜的能带结构图,并在理论和实验上分别对薄膜的I-V特性进行了研究。 A silicon thin film was grown on a P-type silicon substrate by high-frequency sputtering. The substrate temperature was controlled at about 95 ℃. The working gas used was H2 + Ar. The partial pressure of hydrogen was controlled at 31% -70% Of deposition time. The Tauc curve shows that the film prepared by RF sputtering is a wide bandgap material. Based on the HQD theory, the energy band structure of this film is given based on the experimental data. The I-V characteristics of the film are studied theoretically and experimentally.