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日本富士通公司已成功地研究出高速、低成本的制造碳化硅薄膜的方法,为生产碳化硅电子计算机创造了条件。所采用的方法为“喷气法”。使含有甲烷的气体变为等离子体状态,然后喷涂在基片上,使碳素转变为碳化硅。1小时可生长出0.18毫米厚的碳化硅膜。碳化硅散热性好,用于LSI的基底上,可使LSI产生的热顺利散发,使其性能得到显著提高。碳化硅的合成方法有两种:(1) 高温高压法,主要用于工业上制造金刚石粉;(2) 气相法,上述的“
Fujitsu Japan has successfully developed a high-speed, low-cost method of manufacturing silicon carbide films for the production of silicon carbide computer to create the conditions. The method used is “Jet Method”. The methane-containing gas is brought to a plasma state and then sprayed onto the substrate to convert the carbon into silicon carbide. A 0.18 mm thick silicon carbide film was grown in 1 hour. Silicon carbide has good heat dissipation and is used on the LSI substrate to dissipate the heat generated by the LSI and significantly improve its performance. Silicon carbide synthesis methods are two: (1) high temperature and pressure method, mainly used in industrial manufacturing diamond powder; (2) gas phase method, the "