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为了更好实现ZnO材料在光电器件方面的应用,研究了Ag/Au和n-ZnO薄膜的欧姆接触。通过半导体特性分析系统测出欧姆接触的I-V特性曲线和采用挖补圆盘法测试了欧姆接触的接触电阻率,研究了退火温度对接触特性的影响。利用俄歇电子能谱(AES)研究了欧姆接触的微观结构,比较了不同的金属电极的反射特性。结果表明,Ag(50nm)/Au(100nm)和n-ZnO薄膜的欧姆接触在退火温度为500℃时最好,欧姆接触电阻率仅为5.2×10-4Ω·cm-2,且其反射特性比其它金属电极好。
In order to better realize the application of ZnO materials in optoelectronic devices, the ohmic contact between Ag / Au and n-ZnO films has been investigated. The I-V characteristic curve of the ohmic contact is measured by the semiconductor characteristic analysis system and the contact resistivity of the ohmic contact is measured by the dicing disc method. The influence of the annealing temperature on the contact characteristic is studied. The microstructure of ohmic contacts was studied by Auger electron spectroscopy (AES), and the reflection characteristics of different metal electrodes were compared. The results show that the ohmic contact between Ag (50nm) / Au (100nm) and n-ZnO thin films is best at the annealing temperature of 500 ℃, and the ohmic contact resistivity is only 5.2 × 10-4Ω · cm-2. Better than other metal electrodes.