论文部分内容阅读
利用脉冲激光沉积法在玻璃衬底上生长、并经Ar保护下快速退火制备SnS薄膜。利用X射线衍射、拉曼光谱、X射线能量色散谱、原子力显微镜、紫外-可见-近红外分光光度计等表征手段,对不同条件(脉冲激光能量:90和140 rnJ;退火温度:100~400℃)下制备SnS薄膜的晶体结构、化学组分、表面形貌、光学特性等进行表征分析。结果表明:脉冲激光能量为140mJ、退火温度为300℃时所制备的SnS薄膜结晶质量良好、择优取向生长良好、成分接近理想配比(Sn:S=1:1.03)、光吸收系数为10~5 cm~(-1)量级。
Using pulse laser deposition on the glass substrate growth, and rapid protection by Ar Argon prepared SnS film. The effects of different conditions (pulsed laser energy: 90 and 140 rnJ, annealing temperature: 100 ~ 400 ℃) were investigated by XRD, Raman spectroscopy, XRD, AFM, UV- ℃) SnS films prepared by the crystal structure, chemical composition, surface morphology, optical properties such as characterization analysis. The results show that the SnS thin films prepared at the pulse laser energy of 140mJ and the annealing temperature of 300 ℃ have good crystal quality and good orientation growth with the composition close to the ideal ratio (Sn: S = 1: 1.03) and the optical absorption coefficient is 10 ~ 5 cm ~ (-1) order of magnitude.