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用射频磁控溅射法在蓝宝石、硅和石英衬底上沉积出具有好的择优取向的多晶ZnO薄膜 .在 2 70nm波长的光激发下室温下可观察到显著的紫外光发射 (波长为 3 5 6nm)和较弱的蓝光发射 (波长为 44 6nm) .经高温退火后薄膜的结晶质量显著提高 ,在蓝宝石、石英衬底上沉积的薄膜 ,其积分发光强度分别增加了 7倍和 14倍 .而硅衬底上的膜发光强度增强不太显著 .紫外光发射源于电子的带间跃迁 ,而蓝光发射是由电子从氧空位浅施主能级到价带顶的跃迁引起的
A polycrystalline ZnO thin film with good preferential orientation was deposited on sapphire, silicon and quartz substrates by radio-frequency magnetron sputtering. Significant ultraviolet light emission was observed at room temperature under the excitation of 2 70 nm wavelength 3 5 6nm) and weaker blue emission (wavelength of 44 6nm) .The crystal quality of the film after high temperature annealing was significantly improved, the integral luminescence intensity of the film deposited on sapphire and quartz substrate increased by 7 times and 14 Times, and the enhancement of luminescence intensity of Si film is not significant.The UV emission originates from the band-to-band transition of electrons and the blue emission is caused by the transition of electrons from the shallow donor level of oxygen vacancies to the top of the valence band