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采用低压化学气相沉积方法在无掩模的硅图形衬底上异质外延生长3C-SiC.硅图形衬底采用光刻和ICP刻蚀得到.图形由平行长条状沟槽和台面组成,其中沟槽宽度为1~10μm不同间隔,沟槽之间距离为1~10μm不同间隔.对于在不同的沟槽和台面尺寸区域3C-SiC的生长进行了详细研究.采用扫描电镜分别观察了不同区域的生长形貌,分析了图形衬底结构上SiC的生长行为.其中合并生长形成的空气隙结构可以释放由Si和SiC晶格失配引起的应力,从而可以用来解决SiC生长中的晶片翘曲问题,进行厚膜生长.XRD结果表明此无掩模硅图形衬底上得到3C-SiC(111)取向生长.
3C-SiC is heteroepitaxially grown on a maskless silicon pattern substrate by a low pressure chemical vapor deposition method.The patterning substrate is formed by photolithography and ICP etching.The pattern consists of parallel strip-shaped trenches and mesas, of which The groove width is 1 ~ 10μm at different intervals and the distance between the grooves is 1 ~ 10μm at different intervals. The growth of 3C-SiC in different groove and mesa size regions is studied in detail. Scanning electron microscope (SEM) , The growth behavior of SiC on the patterned substrate is analyzed, and the air gap structure formed by the combined growth can release the stress caused by the lattice mismatch between Si and SiC, which can be used to solve the problem of SiC wafer growth XRD results show that 3C-SiC (111) orientation growth is obtained on this maskless silicon patterned substrate.