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理论分析了p型波导层厚度对半导体激光器阈值电流、内损耗以及串联电阻的影响,优化得到该参数对器件电光转换效率的影响。由此设计了波导结构,并制作了波长为980nm非对称高效率半导体激光器。器件的光电特性测试为:腔长为1500μm,20%占空比的巴条的阈值电流以及串联电阻分别为7.3 A和4.8 mΩ,内损耗低至0.78 cm-1。微通道封装1 cm激光二极管列阵连续工作条件下最大电光转换效率为63.2%,相应的斜率效率和输出光功率分别为1.17 W/A和36.2 W,最大输出功率可达139.6 W。实验结果表明:通过优化p型波导层厚度,有效地提高器件电光转换效率。
The influence of the thickness of the p-type waveguide layer on the threshold current, internal loss and series resistance of the semiconductor laser is theoretically analyzed, and the influence of the parameter on the electro-optic conversion efficiency of the device is optimized. The waveguide structure was designed and the asymmetric high efficiency semiconductor laser with 980nm wavelength was fabricated. The photoelectric properties of the device were tested as follows: the threshold current and series resistance of the bar with a cavity length of 1500 μm and 20% duty cycle were 7.3 A and 4.8 mΩ, respectively, and the internal loss was as low as 0.78 cm -1. The maximal electro-optical conversion efficiency of the 1-cm laser diode array with microchannel encapsulation is 63.2% under continuous operating conditions. The corresponding slope efficiency and output optical power are 1.17 W / A and 36.2 W, respectively, and the maximum output power is 139.6 W. The experimental results show that the electro-optic conversion efficiency of the device can be effectively improved by optimizing the thickness of the p-type waveguide layer.