氮化镓技术的不断进步促使设备在更高的功率、电源电压和频率下工作。如图1所示,Qorvo的QPD1013晶体管采用0.50μm GaN-on-SiC技术。它采用具有成本效益的6.6 x 7.2mm DFN(双边扁平无引脚)封装,与传统的金属陶瓷封装相比,可以实现更简单的PCB组装。尽管Qorvo的GaN晶体管效率非常高,但考虑到高RF功率电平意味着即使是高效的PA,晶体管也将具有显著功耗。由于晶体管是SMT组件,因此需要仔细设计PCB以优化热性能。已经 Continued advances in gallium nitride technology have led devices to operate at higher power, supply voltage and frequency. As shown in Figure 1, Qorvo’s QPD1013 transistor uses 0.50μm GaN-on-SiC technology. Its cost-effective 6.6 x 7.2mm DFN (double-sided flat leadless) package enables simpler PCB assembly than traditional cermet packages. Although Qorvo’s GaN transistors are very efficient, considering the high RF power levels means that even for efficient PA, the transistor will have significant power consumption. Because transistors are SMT components, PCBs need to be carefully designed to optimize thermal performance. already