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本实验通过水浴加热和简单化学气相氨化两步法,在旋涂有ZnO的Si衬底上成功合成了由排列整齐纺锤体形貌的GaOOH构成的薄膜,然后在950℃下对样品进行氨化得到由排列整齐纺锤体组成的GaN薄膜。然后对氨化前后样品的形貌,结构和光学性能分别通过FESEM、EDS、TEM、XRD和PL谱进行了表征。结果表明:水热生成的GaOOH薄膜是由纺锤体形状GaOOH紧密排列形成,该纺锤体形状GaOOH有直径大约600 nm,长约为1.5~2μm。氨化前后样品的形貌没发生太大的变化;但晶体结构由正交晶系相GaOOH转变为六方纤锌矿GaN;而且发光峰也由较宽的绿光峰转变为中心为365 nm的蓝光峰,这主要是由于样品由正交晶系相GaOOH转变为六方纤锌矿GaN引起的。最后对排列整齐的锤体形构成的GaOOH薄膜的形成机理以及GaOOH向GaN的转变过程发生的化学反应做了简单的探讨和分析。
In this experiment, a thin film composed of GaOOH with a well-arranged spindle morphology was successfully synthesized on a spin-on ZnO-coated Si substrate by a two-step heating in water bath and a simple chemical vapor phase amination. The sample was then subjected to ammonia at 950 ° C A well-aligned spindle made of GaN film. The morphology, structure and optical properties of the samples before and after ammoniation were characterized by FESEM, EDS, TEM, XRD and PL spectra respectively. The results show that the hydrothermally generated GaOOH thin film is closely arranged by the spindle shape GaOOH, which has a diameter of about 600 nm and a length of about 1.5-2 μm. The morphology of the sample before and after ammoniation did not change much, but the crystal structure changed from orthorhombic phase GaOOH to hexagonal wurtzite GaN, and the luminescence peak also changed from a broad green peak to a center of 365 nm Blue peak, mainly due to the sample transition from orthorhombic GaOOH to hexagonal wurtzite GaN. Finally, the forming mechanism of GaOOH thin film formed by neatly arranged hammer-shaped body and the chemical reactions of GaOOH to GaN are briefly discussed and analyzed.