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A ZnO nanowire (NW) field-effect transistor (FET) is fabricated and characterized,and its characterization of ultraviolet radiation is also investigated.On the one hand,when the radiation time is 5 min,the radiation intensity increases to 5.1 μW/cm2,while the saturation drain current (Idss) of the nanowire FET decreases sharply from 560 to 320 nA.The field effect mobility (μ) of the ZnO nanowire FET drops from 50.17 to 23.82 cm2/(V · s) at VDS = 2.5 V,and the channel resistivity of the FET increases by a factor of 2.On the other hand,when the radiation intensity is 2.5 μW/cm2,the DC performance of the FET does not change significantly with irradiation time (its performances at irradiation times of 5 and 20 min are almost the same);in particular,the Idss of NW FET only reduces by about 50 nA.Research is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications.
A ZnO nanowire (NW) field-effect transistor (FET) is fabricated and characterized, and its characterization of ultraviolet radiation is also investigated. When the radiation time is 5 min, the radiation intensity increases to 5.1 μW / cm2 , while the saturation drain current (Idss) of the nanowire FET decreases sharply from 560 to 320 nA. The field effect mobility (μ) of the ZnO nanowire FET drops from 50.17 to 23.82 cm2 / (V · s) at VDS = 2.5 V , and the channel resistivity of the FET increases by a factor of 2.On the other hand, when the radiation intensity is 2.5 μW / cm2, the DC performance of the FET does not change significantly with irradiation time (its performances at irradiation times of 5 and 20 min are almost the same); in particular, the Idss of NW FET only reduces by about 50 nA. Research is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications.