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The g-values of the ESR signals caused by dangling bonds in a-Si:H, a-SiC:H and a-SiN:H alloy systems have been calculated for a cluster by using the CNDO method, and compared with the observed g-values. The detailed formula for the calculation of g-values was derived from the formula of A.J.Stone. It is found that the g-values for dangling bonds on Si atoms are affected by the surrounding C or N atoms in a-SiC:H or a-SiN: H alloy systems and the calculated results are in good accordance with the observed ones. Some usefull discussions have also been made.
The g-values of the ESR signals caused by dangling bonds in a-Si: H, a-SiC: H and a-SiN: H alloy systems have been calculated for a cluster by using the CNDO method, and compared with the observed g -values. The detailed formula for the calculation of g-values was derived from the formula of AJ Stone. It is found that the g-values for dangling bonds on Si atoms are affected by the surrounding C or N atoms in a-SiC: H or a-SiN: H alloy systems and the calculated results are in accordance with the observed ones. Some usefull discussions have also been made.