采用射频 (RF)反应共溅射法制备了 a- Si Ox Ny∶ Er3+薄膜 ,在不同温度下进行退火处理 ,并测量了样品的可见及红外发光 PL谱 ,观察到 Er3+ 在 5 5 0 nm、5 2 5 nm和 15 32 nm的发光以及基质在 6 2 0 nm和 72 0 nm的发光 .发现退火能明显增强 Er3+ 的发光且对可见和红外发光的影响不同 ,讨论了退火明显增强 Er3+ 发光及退火对可见和红外发光影响不同的机理 .测量了 Er3+ 可见发光的变温 PL谱 ,讨论了退火对 Er3+ 不同能级辐射跃迁几率的影响 .根据基质发光随退火温度的变化 ,分析了基质发光峰的起源 The a-Si Ox Ny: Er3 + thin films were prepared by radio frequency (RF) co-sputtering and annealed at different temperatures. The visible and infrared PL spectra of the samples were measured. The Er3 + 5 2 5 nm and 15 32 nm luminescence and matrix luminescence at 6 2 0 nm and 72 0 nm found that annealing can significantly enhance the Er3 + luminescence and visible and infrared luminescence effects are discussed annealing was significantly enhanced Er3 + luminescence and The effect of annealing on the transition probability of Er3 + emission at different energy levels is discussed.According to the change of the luminescence of matrix with the annealing temperature, the luminescence peak of the matrix origin