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用MEDICI软件对金属-半导体-金属(MSM)结构4H-SiC紫外(UV)探测器的I-V特性以及光谱响应等特性进行了模拟与分析,并探讨了金属电极的宽度、电极间距以及外延层厚度对探测器响应度的影响.结果表明,室温下该探测器的暗电流线性密度达到10-13A/μm,且在不同电压下光电流至少比暗电流大两个数量级;探测器的光谱响应范围为200~400 nm,在347 nm处响应度达到极大值;增大指宽或者减小指间距可以提高探测器的响应度;当波长小于峰值波长时外延层厚度对探测器的响应度基本没影响,而当波长大于峰值波长时随着外延层厚度的增大探测器的响应度有所增大.
The characteristics of IV characteristics and spectral response of 4H-SiC ultraviolet detector with metal-semiconductor-metal (MSM) structure were simulated and analyzed by using MEDICI software. The width of metal electrode, the distance between electrodes and the thickness of epitaxial layer On the detector responsivity.The results show that the dark current linear density of the detector reaches 10-13A / μm at room temperature, and the photocurrent is at least two orders of magnitude larger than the dark current at different voltages. The spectral response of the detector Is 200-400 nm, the responsivity reach the maximum value at 347 nm; increasing the finger width or decreasing the finger spacing can improve the responsivity of the detector; when the wavelength is less than the peak wavelength, the responsivity of the epitaxial layer thickness to the detector is basically No effect, and when the wavelength is greater than the peak wavelength with the epitaxial layer thickness increases the responsivity of the detector increases.