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论文根据ZnMgO/ZnO异质结构二维电子气的能带结构及相关理论模型,采用一维Poisson-Schrodinger方程的自洽求解,模拟计算了ZnMgO/ZnO异质结构中二维电子气的分布及其对ZnMgO势垒层厚度及Mg组分的依赖关系.研究发现该异质结构中ZnMgO势垒层厚度存在一最小临界值:当垒层厚度小于该临界值时,二维电子气消失,当垒层厚度大于该临界值时,其二维电子气密度随着该垒层厚度的增加而增大;同时研究发现ZnMgO势垒层中Mg组分的增加将显著增强其二维电子气的行为,导致二维电子气密度的明显增大;论文对模拟计算获得的结果与相关文献报道的实验结果进行了比较,并从极化效应和能带结构的角度进行了分析和讨论,给出了合理的解释.
According to the band structure of ZnMgO / ZnO heterojunction two-dimensional electron gas and the related theoretical model, the distribution of two-dimensional electron gas in the ZnMgO / ZnO heterostructure and the distribution of two-dimensional electron gas in the ZnMgO / ZnO heterostructure were simulated and solved by using the one-dimensional Poisson-Schrodinger equation. And its dependence on the barrier layer thickness and Mg composition of the ZnMgO layer.It is found that there is a minimum critical value for the ZnMgO barrier layer thickness in the heterostructure: when the barrier layer thickness is less than the critical value, the two-dimensional electron gas disappears When the thickness of the barrier layer is larger than the critical value, the two-dimensional electron gas density increases with the thickness of the barrier layer. Meanwhile, it is found that the increase of the Mg content in the ZnMgO barrier layer significantly enhances the behavior of the two-dimensional electron gas , Resulting in a marked increase of the two-dimensional electron gas density. The results obtained by the simulation are compared with the experimental results reported in the related literatures and analyzed and discussed from the perspective of polarization and band structure. Reasonable explanation.