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聚酰亚胺做为一种新型材料正在半导体集成电路工艺中得到越来越广泛的应用。目前集成电路工艺中用的最多的是做为表面钝化材料。不久前美国MIT Lincoln Laboratory的技术人员把聚酰亚胺用于VLSI的离子注入工艺中,做为一种离子注入掩蔽膜得到了十分理想的效果。目前通用的光刻胶做为离子注入掩膜有其自身的缺点、一是在大剂量、高能量的注入下,掩膜发生形变,从而使VLSI的精度降低。
Polyimide as a new type of material is being used in semiconductor integrated circuit processes more and more widely. At present, the most used integrated circuit technology is used as a surface passivation material. Not long ago, technicians at the MIT Lincoln Laboratory in the United States used polyimide for the ion implantation process of VLSI, and achieved a very good effect as an ion implantation masking film. At present, the common photoresist has its own disadvantages as an ion implantation mask. First, under high-dose and high-energy implantation, the mask is deformed, so that the accuracy of the VLSI is reduced.