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报导了结栅场效应晶体管器件参数和噪声性能的测量,并将结果与理论作了比较。发现高频输入电导 g_(11)和高频栅漏电导 g_(12)随频率的平方而变化,实际上显示出全部热噪声。与理论预计的一样,高频跨导随频率增加而下降。输入短路时场效应晶体管的高频输出噪声为场效应晶体管低频噪声和热噪声丨g_(12)丨之和。短路栅噪声和短路漏噪声之间有一小的相关效应,与理论相符。给出噪声系数的近似表达式,在场效应晶体管截止频率以下有理由认为该式是正确的。
The measurement of the device parameters and noise performance of junction gate field effect transistor is reported, and the result is compared with the theory. It is found that the high-frequency input conductance g_ (11) and the high-frequency gate-drain conductance g_ (12) vary with the square of the frequency and in fact show all the thermal noise. As the theory predicts, high-frequency transconductance decreases as the frequency increases. Input short-circuit field effect transistor high-frequency output noise for the FET low-frequency noise and thermal noise 丨 g_ (12) 丨 sum. There is a small correlation between short-circuit gate noise and short-circuit leakage noise, in agreement with the theory. Given the approximate expression of the noise figure, it is reasonable to assume that the equation is correct below the cut-off frequency of the field effect transistor.