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报道了GaAs基共振隧穿二极管(RTD)与金属半导体金属光电探测器(MSMPD)单片集成的两种光电集成电路,并在室温条件下分别测试了RTD器件、MSM器件和集成电路的电学特性.测试表明:RTD器件的峰谷电流比为4;由于改进了在半绝缘GaAs衬底上制作MSM的方法,5V偏压下的电流由原来的2μA增加到了18μA,基本实现了两种电路的逻辑功能.
Reported two kinds of optoelectronic integrated circuits monolithically integrated with GaAs-based resonant tunneling diodes (RTDs) and metal-semiconductor metal photodetectors (MSMPDs), and tested the electrical characteristics of RTD devices, MSM devices and integrated circuits at room temperature The test shows that the peak-to-valley current ratio of the RTD device is 4. Due to the improved method of fabricating the MSM on the semi-insulating GaAs substrate, the current at 5V bias is increased from 2μA to 18μA, Logic function.