研究了不同栅电流和负载类型的沟槽注入结构SiC BMFET的开关特性。仿真结果表明,栅区注入的少子集中分布在沟道区域,可以有效提升沟道区域的电导率,也有利于器件的快速开关。当栅电流为10A/cm~2时,器件的开态电阻比单极模式下降低了近30%,开关时间为1.76μs。当负载含电感时,与单极模式相比,双极模式下的开关时间并未明显延长,但电流和电压过冲小得多。 The switching characteristics of SiC BMFET with trench-injection structure with different gate currents and load types were investigated. The simulation results show that the small sub-region of the gate region is distributed in the channel region, which can effectively enhance the conductivity of the channel region and also facilitate the fast switching of the device. When the gate current is 10A / cm ~ 2, the on-state resistance of the device is reduced by nearly 30% compared with the unipolar mode, and the switching time is 1.76μs. When the load contains inductance, the switching time in bipolar mode is not significantly longer than in unipolar mode, but the current and voltage overshoots are much smaller.