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为适应肖特基二极管降低正向导通电压和制造成本的需要,采用150mm的掺P硅抛光片为衬底,通过化学气相沉积制备高阻硅外延层。利用傅里叶变换红外线光谱、电容-电压测试等方法对外延电学参数进行了测试和分析。对平板式外延炉的流场、热场与硅外延层厚度、电阻率均匀性的关系进行了研究。在此基础上采用周期变化的气流在外延层生长前反复吹扫腔体,进一步降低了非主动掺杂的不良影响,结合优化的流场和热场条件,最终制备出表面质量优、均匀性好的外延层,满足了厚度和电阻率不均匀性都小于1.0%的目标需求。采用该外延材料制备的肖特基二极管的正向导通电压降低了17.1%,显著减小了功耗,具备了良好的应用前景。
In order to meet the need of the Schottky diode to reduce the forward voltage and the manufacturing cost, a 150mm P-doped silicon polishing pad is used as a substrate, and a high-resistance silicon epitaxial layer is prepared by chemical vapor deposition. The electrical parameters of the extension were tested and analyzed by Fourier transform infrared spectroscopy and capacitance-voltage test. The relationship between the flow field, the thermal field and the thickness of silicon epitaxial layer and the uniformity of resistivity of the flat plate epitaxial furnace was studied. On the basis of this, the periodic variation of the airflow is used to repeatedly purge the cavity before the growth of the epitaxial layer, thereby further reducing the adverse effects of the non-active doping. Combined with the optimized flow field and thermal field conditions, the surface quality and the uniformity are finally prepared A good epitaxial layer meets the target requirement of less than 1.0% in thickness and resistivity non-uniformity. The forward conduction voltage of the Schottky diode fabricated by this epitaxial material is reduced by 17.1%, significantly reducing the power consumption, and has a good application prospect.