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纳米半导体随其粒径减小,量子尺寸效应逐渐增强,呈现出与块材显著不同的特性,因而具有广泛的应用前景。其中,Ⅲ～Ⅴ族纳米半导体如InP的制备和应用尤其引起人们的兴趣。但传统的固相反应法由于制备温度高,很难制得纳米晶体材料。近年来,已有一些新的方法制备纳米级InP。如Douglas和Theopold从[Cp*(Cl)InP(SiMe_3)_2I_2的醇解反应中得到纳米InP,Nzik等利用InCl_3的草酸盐配合物与P(SiMe_3)_3反应制得平均粒径为2.3nm的InP。但这些方法中使用的反应物都剧毒,对空气极其敏感,而且很难合成。
With the decrease of the size and the increase of quantum size effect, the nano-semiconductor shows a significant difference from the bulk material, and has wide application prospects. Among them, the preparation and application of III-V nano-semiconductors such as InP are of particular interest. However, the traditional solid-phase reaction method due to the preparation of high temperature, it is difficult to obtain nanocrystalline materials. In recent years, there have been some new ways to prepare nanoscale InP. For example, Douglas and Theopold obtained the InP by the alcoholysis reaction of [Cp * (Cl) InP (SiMe_3) _2I_2, and Nzik et al. Reacted with P (SiMe_3) _3 by the oxalate complex of InCl_3 to obtain an average particle diameter of 2.3 nm InP. However, the reactants used in these methods are highly toxic, air-sensitive, and difficult to synthesize.