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对HBT工艺中质子隔离注入及其掩膜方法进行了研究.通过计算确定了最佳注入剂量.在一定的温度下退火,可增强隔离效果,最佳退火温度依赖于离子注入剂量,当温度增高时,电阻率又开始下降,并趋向恢复到退火前的状态.采用Si3N4加光刻胶双层掩膜,工艺简单,重复性好,样品无沾污现象,隔离效果佳,制备的器件直流特性较好.
The proton isolation implantation and its masking method were studied in HBT process, and the optimal implantation dose was determined by calculation.After annealing at a certain temperature, the isolation effect can be enhanced. The optimal annealing temperature depends on the ion implantation dose. When the temperature is increased , The resistivity begins to decline again and tends to return to the state before annealing.The Si3N4 plus photoresist double mask has the advantages of simple process, good repeatability, no stain on the sample, good isolation effect, and DC characteristics of the prepared device better.