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非均匀成核理论是在均匀成核的经典理论的基础上发展起来的。自然界雨、雪、冰雹的形成都有个在外来基底上的成核过程,即非均匀成核过程。单晶体的成长,特别是薄膜外延,金属电沉积,气相沉积等单晶薄膜的制备等一般都离不开非均匀成核。目前,半导体工业,大规模集成电路的迅速发展使得单晶薄膜的制备在电子技术中日显重要,也相应地促进了非均匀成核理论,特别是其中有关薄膜凝固理论的发展。
Inhomogeneous nucleation theory is based on the classical theory of uniform nucleation developed. The formation of rain, snow and hail in nature has a nucleation process on a foreign substrate, that is, a non-uniform nucleation process. The growth of single crystals, especially thin film epitaxy, metal electrodeposition, vapor deposition and other single crystal thin film preparation are generally inseparable from the non-uniform nucleation. At present, the rapid development of the semiconductor industry and large-scale integrated circuits has made the preparation of single crystal thin films important in electronic technology and correspondingly promoted the heterogeneous nucleation theory, especially the development of thin film solidification theory.