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The general analysis of the forward AC behavior of a semiconductor diode under series mode is pre- sented for the first time.A new method without any particular assumption to characterize a diode was developed. This method can accurately measure the dependence of series resistance, junction capacitance, junction vol- tage, ideality factor, and interfacial layer impedance on forward biases. The measurements confirm that the ne- gative capacitance (NC) of Schottky diode is an effect of the junction, and the interfacial layer can be consi- dered as a layer structure with nonlinear resistance and capacitance.
The general analysis of the forward AC behavior of a semiconductor diode under series mode is pre- sented for the first time. A new method without any particular assumption to characterize a diode was developed. This method can accurately measure the dependence of series resistance, junction capacitance, junction vol- tage, ideality factor, and interfacial layer impedance on forward biases. The measurements confirm that the ne- gative capacitance (NC) of Schottky diode is an effect of the junction, and the interfacial layer can be consi- dered as a layer structure with nonlinear resistance and capacitance.