论文部分内容阅读
在上级各有关部门的关怀和领导下,河北半导体研究所于1985年12月21～25日在石家庄市召开了第13次科研成果鉴定会,参加这次鉴定会的有来自全国各部门的88个单位141名教授、专家和工程技术人员.通过提请鉴定报告,抽样测试,参观实验室,分组讨论,代表们对提请鉴定的三十项科研成果进行了认真地审查,鉴定委员会进行了评议,一致通过CX571型GaAs微波低噪声场效应晶体管等六项为部级鉴定,T531型GaAs体效应脉冲放大二极管等十项为管理局级鉴定,JDF358型120°K低噪声场效应管放大器等十四项为所级鉴定.会议期间,各级领导和代表们对该所八三年取得的科研成果给以了科学的评价和热
Under the care and leadership of the relevant departments at the higher level, the Institute of Semiconductors of Hebei held the 13th Scientific Research Achievement Appraisal Meeting in Shijiazhuang City from December 21 to December 25, 1985. 88 experts from all departments of the country participated in the appraisal meeting. A total of 141 professors, experts and engineers and technicians from the institute drew the appraisal report, the sampling test, the visit to the laboratory and the group discussion. The delegates conscientiously reviewed the thirty scientific research results submitted to the appraisal committee. The appraisal committee commented, Consistent with the CX571-type GaAs microwave low-noise field-effect transistors and other six for the ministerial-level identification, T531-type GaAs body effect of the pulse amplification diodes and other ten for the administration level appraisal, JDF358 120 ° K low-noise FET amplifier and other fourteen During the conference, leaders and deputies at all levels gave a scientific assessment of the scientific research achievements made by the institute in the past three or three years